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Onsemi MBRM120ET3G

DIODE SCHOTTKY 20V 1A POWERMITE
part number has RoHS
Manufacturer # :MBRM120ET3G
Manufacturer :Onsemi
Dasenic # :F54E40-DS
Customer # :
Description : DIODE SCHOTTKY 20V 1A POWERMITE DO-216AA
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 0.576000$ 0.58
10+$ 0.499500$ 5
100+$ 0.346500$ 34.65
500+$ 0.289800$ 144.9
1000+$ 0.219600$ 219.6
In Stock: 8535
MOQ :1 PCS
Packaging :DO-216AA
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.576
Total :$ 0.58
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MBRM120ET3G information

Product Details
The Onsemi MBRM120ET3G is a Schottky barrier rectifier designed for switching power supplies, converters, and other applications where low voltage drop and fast switching are required. It features a low forward voltage drop, high efficiency, and a transient thermal impedance design for better thermal performance. Functions 1. Rectification: Converts AC voltage to DC voltage. 2. Voltage Clamping: Protects circuits from voltage spikes. 3. Fast Switching: Suitable for high-frequency applications. 4. Low Forward Voltage Drop: Reduces power loss during operation. 5. Thermal Management: Can dissipate heat efficiently, ensuring stable operation. Applications - Power Supplies: Used in switch mode power supplies (SMPS). - DC-DC Converters: Helps improve efficiency in energy conversion. - Solar Inverters: Used in renewable energy applications. - Battery Chargers: Provides effective rectification and clamping. - Voltage Regulation Circuits: Enhances performance in industrial electronic systems. Alternative Parts 1. MBR10100: Another Schottky rectifier from Onsemi with different specifications. 2. SB10-30: A similar type of Schottky rectifier from other manufacturers. 3. STPS1L40: A low forward voltage drop rectifier that can serve similar functions. 4. PMEG2002EA: A low voltage Schottky diode from NXP with comparable performance. Embedded Modules While the MBRM120ET3G is primarily a discrete device, it can be used in conjunction with various embedded modules that require rectification, such as: - Power Management ICs: Where it can be integrated to enhance efficiency. - LED Drivers: Rectification in drivers for LEDs can use Schottky diodes like the MBRM120ET3G. - Battery Management Systems: Modules designed for charging and managing batteries often utilize Schottky diodes. Related Q&A Q1: What is the key advantage of using the MBRM120ET3G in power supply applications? A1: The MBRM120ET3G features a low forward voltage drop, which significantly reduces power loss and improves efficiency, making it ideal for power supply applications. Q2: Can the MBRM120ET3G be used in high-frequency applications? A2: Yes, this Schottky barrier rectifier is suitable for high-frequency applications due to its fast switching capabilities. Q3: What are the maximum reverse voltage and forward current ratings of the MBRM120ET3G? A3: The MBRM120ET3G has a maximum reverse voltage rating of 20V and a forward current rating of 12A. Q4: How does the MBRM120ET3G compare to standard silicon diodes? A4: The MBRM120ET3G offers lower forward voltage drop and faster switching speeds compared to traditional silicon diodes, resulting in better efficiency and less heat generation. Q5: In which applications should I consider alternatives to the MBRM120ET3G? A5: You may consider alternatives if your application requires higher reverse voltage ratings or specific thermal characteristics not met by the MBRM120ET3G, or if you need a diode optimized for different frequency ranges.
  • Onsemi MBRM120ET3G technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Schottky Diodes
  • Product Status:Active
  • Package / Case:DO-216AA
  • Supplier Device Package:Powermite
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type:Schottky
  • Current - Average Rectified ( Io):1A
  • Voltage - Forward ( Vf) ( Max) @ If:530 mV @ 1 A
  • Current - Reverse Leakage @ Vr:10 µA @ 20 V
  • Voltage - D C Reverse ( Vr) ( Max):20 V
  • Operating Temperature - Junction:-65°C ~ 150°C
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