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Motorola, Inc. MBRD660CTG

DIODE ARRAY SCHOTTKY 60V 3A DPAK
part number has RoHS
Manufacturer # :MBRD660CTG
Manufacturer :Motorola, Inc.
Dasenic # :61FFFD-DS
Customer # :
Description : DIODE ARRAY SCHOTTKY 60V 3A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
7+$ 0.118400$ 0.83
10+$ 0.116100$ 1.16
100+$ 0.112600$ 11.26
500+$ 0.109000$ 54.5
1000+$ 0.106700$ 106.7
In Stock: 34997
MOQ :1 PCS
Packaging :TO-252-3, DPak (2 Leads + Tab), SC-63
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1184
Total :$ 0.12
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MBRD660CTG information

Product Details
The MBRD660CTG is designed to provide high efficiency and fast switching capabilities, making it suitable for applications where low forward voltage drops are essential. It is a Schottky diode with a low forward voltage drop and a high current rating, enabling it to conduct well with minimal losses. Functions - Rectification: Converts alternating current (AC) to direct current (DC). - Voltage Clamping: Protects circuits by clamping voltages to safe levels. - Reverse Leakage Current Control: Offers minimal reverse leakage current, improving efficiency. Applications - Power Supplies: Used in switching power supplies and linear power supplies. - DC-DC Converters: Ideal for Buck converters and Boost converters. - Solar Inverters: Finds use in applications converting solar energy. - Battery Chargers: Utilized in various charging circuits due to low forward voltage drop. - RFID Systems: Used in radio-frequency identification systems for fast signal processing. Alternative Parts - STMicroelectronics: STPS660, a similar Schottky diode with comparable specifications. - Vishay: 1N5822, which may fit similar applications but with slightly different ratings. - Infineon Technologies: B1500-13-F, another Schottky device with competitive performance. Embedded Modules While the MBRD660CTG is a discrete component, various modules incorporate Schottky diodes for enhanced performance, such as: - Power Management ICs: These often include integrated Schottky diodes for efficient rectification within the module. - Power Module Solutions: Custom modules designed for specific applications where rectification is needed. - Integrated Circuit Components: Certain integrated circuits utilize discrete Schottky diodes for fast switching preventing reverse breakdown. Related Q&A 1. Q: What is the main advantage of using the MBRD660CTG in power supply applications? A: The MBRD660CTG offers a low forward voltage drop which leads to higher efficiency and reduced heat generation in power supply applications. 2. Q: Can the MBRD660CTG be used in battery charging circuits? A: Yes, it is suitable for battery charging circuits due to its low forward voltage drop and ability to handle high currents. 3. Q: What are the primary differences between the MBRD660CTG and the STPS660? A: The main differences could lie in the forward voltage ratings, current handling capabilities, and reverse recovery times which may vary slightly between the two models. 4. Q: Is the MBRD660CTG suitable for use in RF applications? A: Yes, it can be used in RFID systems and other RF applications where fast switching and low losses are critical. 5. Q: What considerations should be taken when choosing an alternative part for the MBRD660CTG? A: It is important to consider the forward current rating, forward voltage drop, reverse voltage rating, and switching speed to ensure the alternative part meets the specific application requirements.
  • Motorola, Inc. MBRD660CTG technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Diode Arrays
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type:Schottky
  • Voltage - Forward ( Vf) ( Max) @ If:700 mV @ 3 A
  • Current - Reverse Leakage @ Vr:100 µA @ 60 V
  • Diode Configuration:1 Pair Common Cathode
  • Voltage - D C Reverse ( Vr) ( Max):60 V
  • Current - Average Rectified ( Io) (per Diode):3A
  • Operating Temperature - Junction:-65°C ~ 175°C
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