Onsemi FJN3313RTA technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Single, Pre-Biased
Product Status:Obsolete
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max:300 mW
Supplier Device Package:TO-92-3
Transistor Type:NPN - Pre-Biased
Current - Collector ( Ic) ( Max):100 mA
Voltage - Collector Emitter Breakdown ( Max):50 V
Vce Saturation ( Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff ( Max):100nA (ICBO)
D C Current Gain (h F E) ( Min) @ Ic, Vce:68 @ 5mA, 5V
Frequency - Transition:250 MHz
Resistor - Base ( R1):2.2 kOhms
Resistor - Emitter Base ( R2):47 kOhms
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0075
EU RoHS Status:RoHS Compliant
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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Q: What is the return or replacement process for FJN3313RTA?
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
- Please refer to our After-Sale Matters for more detailed instructions.
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FJN3313RTA Datasheet
