Onsemi FGA20N120FTDTU technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Input Type:Standard
Power - Max:298 W
Supplier Device Package:TO-3P
Reverse Recovery Time (trr):447 ns
Current - Collector ( Ic) ( Max):40 A
Voltage - Collector Emitter Breakdown ( Max):1200 V
I G B T Type:Trench Field Stop
Vce(on) ( Max) @ Vge, Ic:2V @ 15V, 20A
Current - Collector Pulsed ( Icm):60 A
Switching Energy:-
Gate Charge:137 nC
Td (on/off) @ 25° C:-
Test Condition:-
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
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FGA20N120FTDTU Datasheet
