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Onsemi FDMA910PZ
MOSFET P-CH 20V 9.4A 6MICROFET
Manufacturer # :FDMA910PZ
Manufacturer :Onsemi
Dasenic # :C00441-DS
Datasheet :
FDMA910PZ Datasheet
FDMA910PZ DatasheetCustomer # :
Description : MOSFET P-CH 20V 9.4A 6MICROFET 6-WDFN Exposed Pad
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.846000 | $ 0.85 |
| 10+ | $ 0.693000 | $ 6.93 |
| 100+ | $ 0.538200 | $ 53.82 |
| 500+ | $ 0.456300 | $ 228.15 |
| 1000+ | $ 0.372600 | $ 372.6 |
In Stock: 14400
MOQ :1 PCS
Packaging :6-WDFN Exposed Pad
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.846
Total :$ 0.85
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Payment :
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FDMA910PZ information
Product Details
of FDMA910PZ:
The Onsemi FDMA910PZ is a discrete N-channel MOSFET designed for high-performance applications. It features low on-state resistance and is capable of efficient performance in power management setups. The device is part of Onsemi’s family of discrete semiconductors, designed for a range of applications in consumer electronics and industrial systems.
Functions:
- Switching: The FDMA910PZ operates effectively as a switch, enabling or disabling power to a load.
- Amplification: It can be used for amplifying signals in various applications.
- Voltage Regulation: The MOSFET is suitable for use in voltage regulation circuits due to its stability and efficiency.
Applications:
- Power Management: Used in battery management systems, power converters, and DC-DC converters.
- Motor Control: Ideal for driving motors in automotive and industrial applications.
- Consumer Electronics: Implemented in devices such as laptops, tablets, and smartphones for power switching.
- Lighting Control: Utilized in LED lighting solutions and driver circuits.
Alternative Parts:
- FDMA110PZ: Similar specifications with slight variations in performance parameters.
- BSS138: A small-signal N-channel MOSFET that can be used in similar low-voltage applications.
- IRLZ44N: A more robust MOSFET suitable for higher current applications.
Embedded Modules:
- Power Management Modules: Often integrated into modules like PMIC (Power Management IC) for enhanced performance.
- Motor Driver Boards: Can be found embedded within motor driver circuitry used in robotics and automation.
- LED Driver Circuits: Used in modules designed specifically for driving LED arrays.
Related Q&A:
1. Q: What are the maximum drain-to-source voltage and current ratings for the FDMA910PZ?
- A: The FDMA910PZ has a maximum drain-to-source voltage (V_DS) rating of 30V and a maximum continuous drain current (I_D) rating of approximately 9A at room temperature, depending on thermal conditions.
2. Q: In which applications is the FDMA910PZ particularly advantageous?
- A: It is advantageous in power management applications, motor control systems, and consumer electronics where high efficiency and low on-resistance are desired.
3. Q: What is the typical on-resistance of the FDMA910PZ?
- A: The typical on-resistance (R_DS(on)) of the FDMA910PZ is around 30 mΩ, which contributes to its high efficiency in power applications.
4. Q: How does the FDMA910PZ compare to the FDMA110PZ?
- A: The FDMA910PZ has a higher current capacity and lower on-resistance compared to the FDMA110PZ, making it more suitable for applications requiring optimal power handling.
5. Q: Can the FDMA910PZ be used in LED lighting applications?
- A: Yes, the FDMA910PZ is well-suited for LED lighting applications where efficient switching and minimal heat generation are critical for performance.
Onsemi FDMA910PZ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:6-WDFN Exposed Pad
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-MicroFET (2x2)
- Power Dissipation ( Max):2.4W (Ta)
- F E T Type:P-Channel
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:9.4A (Ta)
- Rds On ( Max) @ Id, Vgs:20mOhm @ 9.4A, 4.5V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:29 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2805 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
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