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Onsemi 2SC6096-TD-E
100V 1.3W 300@100mA,5V 2A NPN SOT-89 Bipolar Transistors - BJT
Manufacturer # :2SC6096-TD-E
Manufacturer :Onsemi
Dasenic # :A2D861-DS
Datasheet :
2SC6096-TD-E Datasheet
2SC6096-TD-E DatasheetSample :
Customer # :
Description : 100V 1.3W 300@100mA,5V 2A NPN SOT-89 Bipolar Transistors - BJT SOT-89
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.384000 | $ 3.84 |
| 1000+ | $ 0.256000 | $ 256 |
| 2000+ | $ 0.228000 | $ 456 |
| 5000+ | $ 0.216000 | $ 1080 |
| 10000+ | $ 0.200000 | $ 2000 |
In Stock: 10132
MOQ :1 PCS
Packaging :SOT-89
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.384
Total :$ 0.38
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Package / Case:TO-243AA
- Power - Max:1.3 W
- Supplier Device Package:PCP
- Transistor Type:NPN
- Current - Collector ( Ic) ( Max):2 A
- Voltage - Collector Emitter Breakdown ( Max):100 V
- Vce Saturation ( Max) @ Ib, Ic:150mV @ 100mA, 1A
- Current - Collector Cutoff ( Max):1µA (ICBO)
- D C Current Gain (h F E) ( Min) @ Ic, Vce:300 @ 100mA, 5V
- Frequency - Transition:300MHz
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