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NXP USA Inc. PMGD175XN,115
MOSFET 2N-CH 30V 0.9A 6TSSOP
Manufacturer # :PMGD175XN,115
Manufacturer :NXP USA Inc.
Dasenic # :PMGD175XN,115-DS
Datasheet :
PMGD175XN,115 Datasheet
PMGD175XN,115 DatasheetCustomer # :
Description : MOSFET 2N-CH 30V 0.9A 6TSSOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0922 | $ 0.09 |
| 25+ | $ 0.0904 | $ 2.26 |
| 100+ | $ 0.0867 | $ 8.67 |
| 500+ | $ 0.0830 | $ 41.5 |
| 1000+ | $ 0.0783 | $ 78.3 |
In Stock: 6594
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0922
Total :$ 0.09
Delivery :
Payment :
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PMGD175XN,115 information
NXP USA Inc. PMGD175XN,115 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Power - Max:390mW
- Supplier Device Package:6-TSSOP
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):30V
- Current - Continuous Drain ( Id) @ 25° C:900mA
- Rds On ( Max) @ Id, Vgs:225mOhm @ 1A, 4.5V
- Vgs(th) ( Max) @ Id:1.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:1.1nC @ 4.5V
- Input Capacitance ( Ciss) ( Max) @ Vds:75pF @ 15V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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