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NXP USA Inc. PMDPB38UNE,115
MOSFET 2N-CH 20V 4A HUSON6
Manufacturer # :PMDPB38UNE,115
Manufacturer :NXP USA Inc.
Dasenic # :PMDPB38UNE,115-DS
Datasheet :
PMDPB38UNE,115 Datasheet
PMDPB38UNE,115 DatasheetCustomer # :
Description : MOSFET 2N-CH 20V 4A HUSON6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0819 | $ 0.08 |
| 25+ | $ 0.0803 | $ 2.01 |
| 100+ | $ 0.0770 | $ 7.7 |
| 500+ | $ 0.0737 | $ 36.85 |
| 1000+ | $ 0.0697 | $ 69.7 |
In Stock: 16369
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0819
Total :$ 0.08
Delivery :
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PMDPB38UNE,115 information
NXP USA Inc. PMDPB38UNE,115 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-UDFN Exposed Pad
- Power - Max:510mW
- Supplier Device Package:6-HUSON (2x2)
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):20V
- Current - Continuous Drain ( Id) @ 25° C:4A
- Rds On ( Max) @ Id, Vgs:46mOhm @ 3A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:4.4nC @ 4.5V
- Input Capacitance ( Ciss) ( Max) @ Vds:268pF @ 10V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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