NXP Semiconductors PMBFJ308,215 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - JFETs
Product Status:Obsolete
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Power - Max:250 mW
Supplier Device Package:SOT-23 (TO-236AB)
F E T Type:N-Channel
Drain to Source Voltage ( Vdss):25 V
Input Capacitance ( Ciss) ( Max) @ Vds:5pF @ 10V
Voltage - Breakdown ( V( B R) G S S):25 V
Current - Drain ( Idss) @ Vds ( Vgs=0):12 mA @ 10 V
Current Drain ( Id) - Max:-
Voltage - Cutoff ( V G S off) @ Id:1 V @ 1 µA
Resistance - R D S( On):50 Ohms
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0095
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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PMBFJ308,215 Datasheet
