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Nexperia USA Inc. PXN010-30QLJ
PXN010-30QL/SOT8002/MLPAK33
Manufacturer # :PXN010-30QLJ
Manufacturer :Nexperia USA Inc.
Dasenic # :PXN010-30QLJ-DS
Datasheet :
PXN010-30QLJ Datasheet
PXN010-30QLJ DatasheetCustomer # :
Description : PXN010-30QL/SOT8002/MLPAK33
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.4410 | $ 0.44 |
| 10+ | $ 0.3483 | $ 3.48 |
| 100+ | $ 0.2619 | $ 26.19 |
| 500+ | $ 0.2214 | $ 110.7 |
| 1000+ | $ 0.1710 | $ 171 |
In Stock: 13147
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.441
Total :$ 0.44
Delivery :
Payment :
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PXN010-30QLJ information
Nexperia USA Inc. PXN010-30QLJ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:MLPAK33
- Power Dissipation ( Max):1.7W (Ta), 12.5W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:10.3A (Ta), 28A (Tc)
- Rds On ( Max) @ Id, Vgs:10.2mOhm @ 10.3A, 10V
- Vgs(th) ( Max) @ Id:2.2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12.3 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:580 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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