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1 : $1.9796
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Nexperia USA Inc. PSMN6R3-120ESQ
MOSFET N-CH 120V 70A I2PAK
Manufacturer # :PSMN6R3-120ESQ
Manufacturer :Nexperia USA Inc.
Dasenic # :PSMN6R3-120ESQ-DS
Datasheet :
PSMN6R3-120ESQ Datasheet
PSMN6R3-120ESQ DatasheetCustomer # :
Description : MOSFET N-CH 120V 70A I2PAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.9796 | $ 1.98 |
| 25+ | $ 1.9400 | $ 48.5 |
| 100+ | $ 1.8608 | $ 186.08 |
| 500+ | $ 1.7816 | $ 890.8 |
| 1000+ | $ 1.6826 | $ 1682.6 |
In Stock: 1517
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.9796
Total :$ 1.98
Delivery :
Payment :
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PSMN6R3-120ESQ information
Nexperia USA Inc. PSMN6R3-120ESQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:I2PAK
- Power Dissipation ( Max):405W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):120 V
- Current - Continuous Drain ( Id) @ 25° C:70A (Tc)
- Rds On ( Max) @ Id, Vgs:6.7mOhm @ 25A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:207.1 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:11384 pF @ 60 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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