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Nexperia USA Inc. PSMN6R1-30YLDX
MOSFET N-CH 30V 66A LFPAK56
Manufacturer # :PSMN6R1-30YLDX
Manufacturer :Nexperia USA Inc.
Dasenic # :PSMN6R1-30YLDX-DS
Datasheet :
PSMN6R1-30YLDX Datasheet
PSMN6R1-30YLDX DatasheetCustomer # :
Description : MOSFET N-CH 30V 66A LFPAK56
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.6300 | $ 0.63 |
| 10+ | $ 0.5364 | $ 5.36 |
| 100+ | $ 0.3780 | $ 37.8 |
| 500+ | $ 0.3159 | $ 157.95 |
| 1000+ | $ 0.2871 | $ 287.1 |
In Stock: 8400
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.63
Total :$ 0.63
Delivery :
Payment :
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PSMN6R1-30YLDX information
Nexperia USA Inc. PSMN6R1-30YLDX technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-100, SOT-669
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:LFPAK56, Power-SO8
- Power Dissipation ( Max):47W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:66A (Tc)
- Rds On ( Max) @ Id, Vgs:6mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:2.2V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:13.6 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:817 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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