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Nexperia USA Inc. PSMN2R9-30MLC,115
MOSFET N-CH 30V 70A LFPAK33
Manufacturer # :PSMN2R9-30MLC,115
Manufacturer :Nexperia USA Inc.
Dasenic # :PSMN2R9-30MLC,115-DS
Datasheet :
PSMN2R9-30MLC,115 Datasheet
PSMN2R9-30MLC,115 DatasheetCustomer # :
Description : MOSFET N-CH 30V 70A LFPAK33
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.2489 | $ 0.25 |
| 25+ | $ 0.2439 | $ 6.1 |
| 100+ | $ 0.2339 | $ 23.39 |
| 500+ | $ 0.2240 | $ 112 |
| 1000+ | $ 0.2115 | $ 211.5 |
In Stock: 4500
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2489
Total :$ 0.25
Delivery :
Payment :
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PSMN2R9-30MLC,115 information
Nexperia USA Inc. PSMN2R9-30MLC,115 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:LFPAK33
- Power Dissipation ( Max):91W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:70A (Tc)
- Rds On ( Max) @ Id, Vgs:2.9mOhm @ 25A, 10V
- Vgs(th) ( Max) @ Id:2.15V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:36.1 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2419 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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