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Nexperia USA Inc. PSMN016-100YS,115
MOSFET N-CH 100V 51A LFPAK56
Manufacturer # :PSMN016-100YS,115
Manufacturer :Nexperia USA Inc.
Dasenic # :PSMN016-100YS,115-DS
Datasheet :
PSMN016-100YS,115 Datasheet
PSMN016-100YS,115 DatasheetCustomer # :
Description : MOSFET N-CH 100V 51A LFPAK56
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.0170 | $ 1.02 |
| 10+ | $ 0.8415 | $ 8.42 |
| 100+ | $ 0.6453 | $ 64.53 |
| 500+ | $ 0.6012 | $ 300.6 |
| 1500+ | $ 0.4977 | $ 746.55 |
In Stock: 5634
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.017
Total :$ 1.02
Delivery :
Payment :
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PSMN016-100YS,115 information
Nexperia USA Inc. PSMN016-100YS,115 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-100, SOT-669
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:LFPAK56, Power-SO8
- Power Dissipation ( Max):117W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:51A (Tc)
- Rds On ( Max) @ Id, Vgs:16.3mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:4V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:54 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2744 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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