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Nexperia USA Inc. PMZB600UNELYL
MOSFET N-CH 20V 600MA DFN1006B-3
Manufacturer # :PMZB600UNELYL
Manufacturer :Nexperia USA Inc.
Dasenic # :PMZB600UNELYL-DS
Datasheet :
PMZB600UNELYL Datasheet
PMZB600UNELYL DatasheetCustomer # :
Description : MOSFET N-CH 20V 600MA DFN1006B-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.2970 | $ 0.3 |
| 10+ | $ 0.2043 | $ 2.04 |
| 100+ | $ 0.0855 | $ 8.55 |
| 1000+ | $ 0.0540 | $ 54 |
| 2500+ | $ 0.0513 | $ 128.25 |
In Stock: 15952
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.297
Total :$ 0.30
Delivery :
Payment :
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PMZB600UNELYL information
Nexperia USA Inc. PMZB600UNELYL technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:3-XFDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DFN1006B-3
- Power Dissipation ( Max):360mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:600mA (Ta)
- Rds On ( Max) @ Id, Vgs:620mOhm @ 600mA, 4.5V
- Vgs(th) ( Max) @ Id:950mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:0.7 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:21.3 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.2V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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