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Nexperia USA Inc. PMXB75UPEZ
MOSFET P-CH 20V 2.9A DFN1010D-3
Manufacturer # :PMXB75UPEZ
Manufacturer :Nexperia USA Inc.
Dasenic # :PMXB75UPEZ-DS
Datasheet :
PMXB75UPEZ Datasheet
PMXB75UPEZ DatasheetCustomer # :
Description : MOSFET P-CH 20V 2.9A DFN1010D-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0576 | $ 0.06 |
| 25+ | $ 0.0564 | $ 1.41 |
| 100+ | $ 0.0542 | $ 5.42 |
| 500+ | $ 0.0518 | $ 25.9 |
| 1000+ | $ 0.0490 | $ 49 |
In Stock: 24390
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0576
Total :$ 0.06
Delivery :
Payment :
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PMXB75UPEZ information
Nexperia USA Inc. PMXB75UPEZ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:3-XDFN Exposed Pad
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DFN1010D-3
- Power Dissipation ( Max):317mW (Ta), 8.33W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.9A (Ta)
- Rds On ( Max) @ Id, Vgs:85mOhm @ 2.9A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:608 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.2V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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