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1 : $0.0751
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Nexperia USA Inc. PMXB360ENEAZ
MOSFET N-CH 80V 1.1A DFN1010D-3
Manufacturer # :PMXB360ENEAZ
Manufacturer :Nexperia USA Inc.
Dasenic # :PMXB360ENEAZ-DS
Datasheet :
PMXB360ENEAZ Datasheet
PMXB360ENEAZ DatasheetCustomer # :
Description : MOSFET N-CH 80V 1.1A DFN1010D-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0751 | $ 0.08 |
| 25+ | $ 0.0735 | $ 1.84 |
| 100+ | $ 0.0706 | $ 7.06 |
| 500+ | $ 0.0676 | $ 33.8 |
| 1000+ | $ 0.0638 | $ 63.8 |
In Stock: 54000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0751
Total :$ 0.08
Delivery :
Payment :
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PMXB360ENEAZ information
Nexperia USA Inc. PMXB360ENEAZ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:3-XDFN Exposed Pad
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DFN1010D-3
- Power Dissipation ( Max):400mW (Ta), 6.25W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:1.1A (Ta)
- Rds On ( Max) @ Id, Vgs:450mOhm @ 1.1A, 10V
- Vgs(th) ( Max) @ Id:2.7V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:4.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:130 pF @ 40 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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