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Nexperia USA Inc. PMV65XP/MIR
MOSFET P-CH 20V 2.8A TO236AB
Manufacturer # :PMV65XP/MIR
Manufacturer :Nexperia USA Inc.
Dasenic # :PMV65XP/MIR-DS
Datasheet :
PMV65XP/MIR Datasheet
PMV65XP/MIR DatasheetCustomer # :
Description : MOSFET P-CH 20V 2.8A TO236AB
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| Quantity | Unit Price | Total |
In Stock: 90
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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PMV65XP/MIR information
Nexperia USA Inc. PMV65XP/MIR technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-236AB
- Power Dissipation ( Max):480mW (Ta), 4.17W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.8A (Ta)
- Rds On ( Max) @ Id, Vgs:74mOhm @ 2.8A, 4.5V
- Vgs(th) ( Max) @ Id:900mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:7.7 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:744 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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