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Nexperia USA Inc. PMV52ENER
Manufacturer # :PMV52ENER
Manufacturer :Nexperia USA Inc.
Dasenic # :PMV52ENER-DS
Datasheet : PMV52ENER Datasheet
Customer # :
Description : PMV52ENE/SOT23/TO-236AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 6344
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.342
Total :$ 0.34
Delivery :
Payment :
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PMV52ENER information
Nexperia USA Inc. PMV52ENER technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-236AB
- Power Dissipation ( Max):630mW (Ta), 5.7W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:3.2A (Ta)
- Rds On ( Max) @ Id, Vgs:70mOhm @ 3.2A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:3.3 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:100 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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