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Nexperia USA Inc. PMV50ENEAR
MOSFET N-CH 30V 3.9A TO236AB
Manufacturer # :PMV50ENEAR
Manufacturer :Nexperia USA Inc.
Dasenic # :PMV50ENEAR-DS
Datasheet :
PMV50ENEAR Datasheet
PMV50ENEAR DatasheetCustomer # :
Description : MOSFET N-CH 30V 3.9A TO236AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0877 | $ 0.09 |
| 25+ | $ 0.0860 | $ 2.15 |
| 100+ | $ 0.0824 | $ 8.24 |
| 500+ | $ 0.0789 | $ 39.45 |
| 1000+ | $ 0.0745 | $ 74.5 |
In Stock: 34830
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0877
Total :$ 0.09
Delivery :
Payment :
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PMV50ENEAR information
Nexperia USA Inc. PMV50ENEAR technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-236AB
- Power Dissipation ( Max):510mW (Ta), 3.9W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:3.9A (Ta)
- Rds On ( Max) @ Id, Vgs:43mOhm @ 3.9A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:10 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:276 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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