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1 : $0.3960
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Nexperia USA Inc. PMV30ENEAR
MOSFET N-CH 40V 4.8A TO236AB
Manufacturer # :PMV30ENEAR
Manufacturer :Nexperia USA Inc.
Dasenic # :PMV30ENEAR-DS
Datasheet :
PMV30ENEAR Datasheet
PMV30ENEAR DatasheetCustomer # :
Description : MOSFET N-CH 40V 4.8A TO236AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3960 | $ 0.4 |
| 10+ | $ 0.3078 | $ 3.08 |
| 100+ | $ 0.1710 | $ 17.1 |
| 1000+ | $ 0.1170 | $ 117 |
| 3000+ | $ 0.0981 | $ 294.3 |
In Stock: 14179
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.396
Total :$ 0.40
Delivery :
Payment :
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PMV30ENEAR information
Nexperia USA Inc. PMV30ENEAR technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-236AB
- Power Dissipation ( Max):710mW (Ta), 8.3W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:4.8A (Ta)
- Rds On ( Max) @ Id, Vgs:30mOhm @ 4.8A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:11.7 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:440 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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