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NXP Semiconductors PMV100EPAR

MOSFET P-CH 60V 2.2A TO236AB
part number has RoHS
Manufacturer # :PMV100EPAR
Manufacturer :NXP Semiconductors
Dasenic # :54F73C-DS
Customer # :
Description : MOSFET P-CH 60V 2.2A TO236AB TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
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QuantityUnit PriceTotal
1+$ 0.099500$ 0.1
25+$ 0.097500$ 2.44
100+$ 0.093500$ 9.35
500+$ 0.089500$ 44.75
1000+$ 0.084500$ 84.5
In Stock: 16780
MOQ :1 PCS
Packaging :TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0995
Total :$ 0.10
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PMV100EPAR information

Product Details
- Type: N-Channel MOSFET - Package: Typically available in a small form factor to facilitate integration into various electronic circuits. - Voltage Rating: Generally features a threshold voltage suitable for low-voltage applications. - Current Rating: Designed to handle satisfactory power levels while maintaining efficiency and heat dissipation in designs. Functions - Switching: Acts as a switch in power electronics, enabling devices to turn on/off. - Amplification: Can be used for signal amplification in analog applications. - Power Management: Regulates and manages power distribution in circuits to enhance energy efficiency. Applications - Power Supply Switching: Commonly used in power management circuits and DC-DC converters. - Motor Control: Employed in applications that require control of DC motors or other inductive loads. - LED Drivers: Ideal for controlling LED lighting systems. - Signal Modulation: Used in RF applications for signal processing and enhancement. Alternative Parts - Other NXP MOSFETs: Other alternatives may include different MOSFETs from NXP with varying voltage, current ratings, or different packages based on the application needs. - Competing Brands: Devices from other manufacturers such as Infineon, Texas Instruments, or STMicroelectronics, which offer similar functionality specifications. Embedded Modules While the PMV100EPAR itself is a discrete device, it can be integrated into larger embedded systems, particularly: - Arduino or Raspberry Pi Projects: Used for controlling power devices through those platforms. - Custom PCB Designs: Integrated into custom-designed printed circuit boards that utilize MOSFET for switching or amplification. - Power Management Systems: Found in commercially available power management modules that utilize MOSFET technology. --- Related Q&A Q1: What are the main characteristics of the PMV100EPAR MOSFET? - A1: The PMV100EPAR features characteristics such as low on-resistance, capable of handling certain voltage and current levels, and is often used for efficient switching and amplifying in circuits. Q2: In which applications can the PMV100EPAR be effectively utilized? - A2: It is effectively used in DC-DC converters, LED drivers, motor control applications, and in signal amplification/modulation circuits. Q3: What are some alternative MOSFETs that can replace PMV100EPAR in a circuit? - A3: Alternatives may include other NXP MOSFETs like the PMV10XEPAR or similar MOSFETs from manufacturers like Infineon or STMicroelectronics that provide equivalent ratings. Q4: How does the PMV100EPAR contribute to energy efficiency in power management applications? - A4: Its low on-resistance minimizes power losses during switching, which conserves energy, making it ideal for applications like power supply converters and battery management systems. Q5: Can the PMV100EPAR be used in robotics for motor control? - A5: Yes, the PMV100EPAR can be effectively used in robotics to control motors, allowing for efficient speed and direction regulation through PWM (Pulse Width Modulation) techniques.
  • NXP Semiconductors PMV100EPAR technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Single MOSFETs
  • Product Status:Active
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:TO-236AB
  • Power Dissipation ( Max):710mW (Ta), 8.3W (Tc)
  • F E T Type:P-Channel
  • Drain to Source Voltage ( Vdss):60 V
  • Current - Continuous Drain ( Id) @ 25° C:2.2A (Ta)
  • Rds On ( Max) @ Id, Vgs:130mOhm @ 2.2A, 10V
  • Vgs(th) ( Max) @ Id:3.2V @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:17 nC @ 10 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:616 pF @ 30 V
  • Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
  • Vgs ( Max):±20V
  • Series:Automotive, AEC-Q101, TrenchMOS™
  • Base Product Number:PMV100
  • Packaging:Dasenic-Reel®
  • Packaging:Cut Tape (CT)
  • Packaging:Tape & Reel (TR)
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