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Nexperia USA Inc. PMPB07R0UNX
MOSFET N-CH 20V 11.6A DFN2020M-6
Manufacturer # :PMPB07R0UNX
Manufacturer :Nexperia USA Inc.
Dasenic # :PMPB07R0UNX-DS
Datasheet :
PMPB07R0UNX Datasheet
PMPB07R0UNX DatasheetCustomer # :
Description : MOSFET N-CH 20V 11.6A DFN2020M-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.1240 | $ 0.12 |
| 25+ | $ 0.1215 | $ 3.04 |
| 100+ | $ 0.1166 | $ 11.66 |
| 500+ | $ 0.1116 | $ 55.8 |
| 1000+ | $ 0.1054 | $ 105.4 |
In Stock: 9446
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.124
Total :$ 0.12
Delivery :
Payment :
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PMPB07R0UNX information
Nexperia USA Inc. PMPB07R0UNX technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-UDFN Exposed Pad
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DFN2020MD-6
- Power Dissipation ( Max):1.9W (Ta), 12.5W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:11.6A (Ta)
- Rds On ( Max) @ Id, Vgs:9mOhm @ 11.6A, 4.5V
- Vgs(th) ( Max) @ Id:900mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:30 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1696 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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