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Nexperia USA Inc. PMCM6501VPEZ
MOSFET P-CH 12V 6.2A 6WLCSP
Manufacturer # :PMCM6501VPEZ
Manufacturer :Nexperia USA Inc.
Dasenic # :PMCM6501VPEZ-DS
Datasheet :
PMCM6501VPEZ Datasheet
PMCM6501VPEZ DatasheetCustomer # :
Description : MOSFET P-CH 12V 6.2A 6WLCSP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.1784 | $ 0.18 |
| 25+ | $ 0.1748 | $ 4.37 |
| 100+ | $ 0.1677 | $ 16.77 |
| 500+ | $ 0.1606 | $ 80.3 |
| 1000+ | $ 0.1517 | $ 151.7 |
In Stock: 25744
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1784
Total :$ 0.18
Delivery :
Payment :
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PMCM6501VPEZ information
Nexperia USA Inc. PMCM6501VPEZ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-XFBGA, WLCSP
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-WLCSP (1.48x0.98)
- Power Dissipation ( Max):556mW (Ta), 12.5W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):12 V
- Current - Continuous Drain ( Id) @ 25° C:6.2A (Ta)
- Rds On ( Max) @ Id, Vgs:25mOhm @ 3A, 4.5V
- Vgs(th) ( Max) @ Id:900mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:29.4 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1400 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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