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Nexperia USA Inc. PHB32N06LT,118
MOSFET N-CH 60V 34A D2PAK
Manufacturer # :PHB32N06LT,118
Manufacturer :Nexperia USA Inc.
Dasenic # :PHB32N06LT,118-DS
Datasheet :
PHB32N06LT,118 Datasheet
PHB32N06LT,118 DatasheetCustomer # :
Description : MOSFET N-CH 60V 34A D2PAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.4262 | $ 0.43 |
| 25+ | $ 0.4176 | $ 10.44 |
| 100+ | $ 0.4006 | $ 40.06 |
| 500+ | $ 0.3835 | $ 191.75 |
| 1000+ | $ 0.3623 | $ 362.3 |
In Stock: 11520
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.4262
Total :$ 0.43
Delivery :
Payment :
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PHB32N06LT,118 information
Nexperia USA Inc. PHB32N06LT,118 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D²PAK
- Power Dissipation ( Max):97W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:34A (Tc)
- Rds On ( Max) @ Id, Vgs:37mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:17 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1280 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 5V
- Vgs ( Max):±15V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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