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DownloadIn Stock: 85
MOQ : 1 PCS
Packaging :TO-236-3, SC-59, SOT-23-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Five-star service - Category:Discrete Semiconductor Devices/Single, Pre-Biased Bipolar Transistors
- Product Status:Obsolete
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Power - Max:250 mW
- Supplier Device Package:TO-236AB
- Transistor Type:NPN - Pre-Biased
- Current - Collector ( Ic) ( Max):100 mA
- Voltage - Collector Emitter Breakdown ( Max):50 V
- Vce Saturation ( Max) @ Ib, Ic:150mV @ 500µA, 10mA
- Current - Collector Cutoff ( Max):1µA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:30 @ 5mA, 5V
- Frequency - Transition:230 MHz
- Resistor - Base ( R1):10 kOhms
- Resistor - Emitter Base ( R2):10 kOhms
