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Nexperia USA Inc. PDTA123JQC-QZ
Manufacturer # :PDTA123JQC-QZ
Manufacturer :Nexperia USA Inc.
Dasenic # :PDTA123JQC-QZ-DS
Datasheet : PDTA123JQC-QZ Datasheet
Customer # :
Description : PDTA123JQC-Q/SOT8009/DFN1412D-
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 24000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0225
Total :$ 0.02
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PDTA123JQC-QZ information
Nexperia USA Inc. PDTA123JQC-QZ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Single, Pre-Biased
- Product Status:Active
- Mounting Type:Surface Mount, Wettable Flank
- Package / Case:3-XDFN Exposed Pad
- Power - Max:360 mW
- Supplier Device Package:DFN1412D-3
- Transistor Type:PNP - Pre-Biased
- Current - Collector ( Ic) ( Max):100 mA
- Voltage - Collector Emitter Breakdown ( Max):50 V
- Vce Saturation ( Max) @ Ib, Ic:100mV @ 250µA, 5mA
- Current - Collector Cutoff ( Max):100nA
- D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 10mA, 5V
- Frequency - Transition:180 MHz
- Resistor - Base ( R1):2.2 kOhms
- Resistor - Emitter Base ( R2):47 kOhms
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0075
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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