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Nexperia USA Inc. GAN063-650WSAQ
Manufacturer # :GAN063-650WSAQ
Manufacturer :Nexperia USA Inc.
Dasenic # :GAN063-650WSAQ-DS
Datasheet : GAN063-650WSAQ Datasheet
Customer # :
Description : GANFET N-CH 650V 34.5A TO247-3
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In Stock: 3420
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 9.7691
Total :$ 9.77
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GAN063-650WSAQ information
Nexperia USA Inc. GAN063-650WSAQ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:GaNFET (Cascode Gallium Nitride FET)
- Supplier Device Package:TO-247-3
- Power Dissipation ( Max):143W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:34.5A (Ta)
- Rds On ( Max) @ Id, Vgs:60mOhm @ 25A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:15 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1000 pF @ 400 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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