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Nexperia USA Inc. BUK9Y113-100E,115
MOSFET N-CH 100V 12A LFPAK56
Manufacturer # :BUK9Y113-100E,115
Manufacturer :Nexperia USA Inc.
Dasenic # :BUK9Y113-100E,115-DS
Datasheet :
BUK9Y113-100E,115 Datasheet
BUK9Y113-100E,115 DatasheetCustomer # :
Description : MOSFET N-CH 100V 12A LFPAK56
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.5580 | $ 0.56 |
| 10+ | $ 0.4914 | $ 4.91 |
| 100+ | $ 0.3357 | $ 33.57 |
| 500+ | $ 0.2808 | $ 140.4 |
| 1000+ | $ 0.2358 | $ 235.8 |
In Stock: 34815
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.558
Total :$ 0.56
Delivery :
Payment :
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BUK9Y113-100E,115 information
Nexperia USA Inc. BUK9Y113-100E,115 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-100, SOT-669
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:LFPAK56, Power-SO8
- Power Dissipation ( Max):45W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:12A (Tc)
- Rds On ( Max) @ Id, Vgs:110mOhm @ 5A, 10V
- Vgs(th) ( Max) @ Id:2.1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:8.4 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:870 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):5V
- Vgs ( Max):±10V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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