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NXP Semiconductors BUK9K17-60EX

MOSFET 2N-CH 60V 26A 56LFPAK
part number has RoHS
Manufacturer # :BUK9K17-60EX
Manufacturer :NXP Semiconductors
Dasenic # :038E15-DS
Customer # :
Description : MOSFET 2N-CH 60V 26A 56LFPAK SOT-1205, 8-LFPAK56 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
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QuantityUnit PriceTotal
10+$ 0.137200$ 1.37
500+$ 0.114300$ 57.15
In Stock: 49055
MOQ :1 PCS
Packaging :SOT-1205, 8-LFPAK56 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1372
Total :$ 0.14
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BUK9K17-60EX information

Product Details
of BUK9K17-60EX The BUK9K17-60EX is a high-performance N-channel MOSFET designed for various electronic applications. It features low on-resistance and fast switching capabilities, making it suitable for power management applications, automotive systems, and more. Functions - Switching: The BUK9K17-60EX operates as an electronic switch, allowing or blocking current flow to control power distribution efficiently. - Amplification: In some configurations, it can be used to amplify signals in electronic circuits. - Voltage Regulation: It can play a role in voltage regulation circuits by controlling current flow to maintain desired voltage levels. Applications - Automotive Applications: Ideal for power switching applications within vehicles, such as driving motors, actuators, or power distribution systems. - Power Management: Used in DC-DC converters, power supplies, and battery management systems. - Consumer Electronics: Applicable in devices that require efficient power switching or signal control. - Industrial Equipment: Useful in automation systems and industrial controls requiring reliable MOSFET components. Alternative Parts - NXP BUK9K17-60B: Similar in specifications but may differ in package type or other parameters. - STMicroelectronics STP16NF06: A comparable N-channel MOSFET with similar voltage ratings but varying on-resistance. - Infineon IRF3205: Another N-channel MOSFET option with different performance characteristics suitable for high-power applications. Embedded Modules While the BUK9K17-60EX itself is a discrete component, it can be integrated into various embedded modules and circuit designs. Some possible embedded applications include: - Power Modules for Electric Vehicles (EVs): Integration for enhanced power management. - Smart Power Controllers: Used in modules that require efficient on/off control and temperature monitoring. - H-Bridge Circuits for Motor Control: Part of embedded motor driver modules for robotics and automation. Related Q&A 1. Q: What are the key electrical characteristics of the BUK9K17-60EX? - A: The BUK9K17-60EX features a maximum drain-source voltage (Vds) of 60V, low on-resistance (Rds(on)), and a continuous drain current rating that allows it to handle significant power levels efficiently. 2. Q: In what types of circuits would you typically use the BUK9K17-60EX? - A: It is commonly used in power management circuits, automotive electronics, and high-efficiency switching applications, such as power supplies and motor drivers. 3. Q: What are some advantages of using MOSFETs like the BUK9K17-60EX in power applications? - A: MOSFETs like the BUK9K17-60EX provide low on-resistance, fast switching speeds, improved thermal performance, and greater efficiency compared to traditional bipolar junction transistors (BJTs) in power applications. 4. Q: Can I replace the BUK9K17-60EX with any other MOSFET? - A: While some alternatives may fit physically, it is important to compare key specifications such as drain-source voltage, on-resistance, and current ratings to ensure compatibility in your application. 5. Q: How is the thermal management of the BUK9K17-60EX handled in applications? - A: Effective thermal management can be achieved through proper heatsinking and PCB design, ensuring that the device operates within its safe temperature limits, especially under high-load conditions. These questions and answers provide insights into the BUK9K17-60EX and its significance in electronic applications.
  • NXP Semiconductors BUK9K17-60EX technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/FETs, MOSFETs
  • Product Status:Active
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Technology:MOSFET (Metal Oxide)
  • Power - Max:53W
  • Supplier Device Package:LFPAK56D
  • Configuration:2 N-Channel (Dual)
  • F E T Feature:Logic Level Gate
  • Drain to Source Voltage ( Vdss):60V
  • Current - Continuous Drain ( Id) @ 25° C:26A
  • Rds On ( Max) @ Id, Vgs:15.6mOhm @ 10A, 10V
  • Vgs(th) ( Max) @ Id:2.1V @ 1mA
  • Gate Charge ( Qg) ( Max) @ Vgs:16.5nC @ 5V
  • Input Capacitance ( Ciss) ( Max) @ Vds:2223pF @ 25V
  • Series:Automotive, AEC-Q100
  • Base Product Number:BUK9K17
  • Packaging:Dasenic-Reel®
  • Packaging:Cut Tape (CT)
  • Packaging:Tape & Reel (TR)
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