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Nexperia USA Inc. BUK963R3-60E,118
MOSFET N-CH 60V 120A D2PAK
Manufacturer # :BUK963R3-60E,118
Manufacturer :Nexperia USA Inc.
Dasenic # :BUK963R3-60E,118-DS
Datasheet :
BUK963R3-60E,118 Datasheet
BUK963R3-60E,118 DatasheetCustomer # :
Description : MOSFET N-CH 60V 120A D2PAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.2870 | $ 1.29 |
| 25+ | $ 1.2600 | $ 31.5 |
| 100+ | $ 1.2150 | $ 121.5 |
| 500+ | $ 1.1610 | $ 580.5 |
| 1000+ | $ 1.0980 | $ 1098 |
In Stock: 12000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.287
Total :$ 1.29
Delivery :
Payment :
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BUK963R3-60E,118 information
Nexperia USA Inc. BUK963R3-60E,118 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D²PAK
- Power Dissipation ( Max):293W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:120A (Tc)
- Rds On ( Max) @ Id, Vgs:3mOhm @ 25A, 10V
- Vgs(th) ( Max) @ Id:2.1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:95 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:13490 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):5V
- Vgs ( Max):±10V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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