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1 : $0.0396
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Nexperia USA Inc. BSS84AKQBZ
BSS84AKQB/SOT8015/DFN1110D-3
Manufacturer # :BSS84AKQBZ
Manufacturer :Nexperia USA Inc.
Dasenic # :BSS84AKQBZ-DS
Datasheet :
BSS84AKQBZ Datasheet
BSS84AKQBZ DatasheetCustomer # :
Description : BSS84AKQB/SOT8015/DFN1110D-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0396 | $ 0.04 |
| 10+ | $ 0.0396 | $ 0.4 |
| 25+ | $ 0.0396 | $ 0.99 |
| 50+ | $ 0.0396 | $ 1.98 |
| 100+ | $ 0.0396 | $ 3.96 |
In Stock: 7795
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0396
Total :$ 0.04
Delivery :
Payment :
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BSS84AKQBZ information
Nexperia USA Inc. BSS84AKQBZ technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount, Wettable Flank
- Package / Case:3-XDFN Exposed Pad
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:DFN1110D-3
- Power Dissipation ( Max):420mW (Ta), 4.2W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):50 V
- Current - Continuous Drain ( Id) @ 25° C:270mA (Ta)
- Rds On ( Max) @ Id, Vgs:7.5Ohm @ 100mA, 10V
- Vgs(th) ( Max) @ Id:2.1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:0.6 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:23.2 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+12V, -20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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