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Nexperia USA Inc. BSH205G2VL
MOSFET P-CH 20V 2.3A TO236AB
Manufacturer # :BSH205G2VL
Manufacturer :Nexperia USA Inc.
Dasenic # :BSH205G2VL-DS
Datasheet :
BSH205G2VL Datasheet
BSH205G2VL DatasheetCustomer # :
Description : MOSFET P-CH 20V 2.3A TO236AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.1250 | $ 1.25 |
| 20000+ | $ 0.0625 | $ 1250 |
| 30000+ | $ 0.0599 | $ 1797 |
| 50000+ | $ 0.0569 | $ 2845 |
| 100000+ | $ 0.0560 | $ 5600 |
In Stock: 36337
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.125
Total :$ 0.13
Delivery :
Payment :
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BSH205G2VL information
Nexperia USA Inc. BSH205G2VL technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-236AB
- Power Dissipation ( Max):480mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.3A (Ta)
- Rds On ( Max) @ Id, Vgs:170mOhm @ 2A, 4.5V
- Vgs(th) ( Max) @ Id:950mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:6.5 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:418 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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