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Nexperia USA Inc. BSH111,235
MOSFET N-CH 55V 335MA TO236AB
Manufacturer # :BSH111,235
Manufacturer :Nexperia USA Inc.
Dasenic # :BSH111,235-DS
Datasheet :
BSH111,235 Datasheet
BSH111,235 DatasheetCustomer # :
Description : MOSFET N-CH 55V 335MA TO236AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.3132 | $ 3.13 |
| 20000+ | $ 0.1566 | $ 3132 |
| 30000+ | $ 0.1545 | $ 4635 |
| 50000+ | $ 0.1313 | $ 6565 |
| 100000+ | $ 0.1293 | $ 12930 |
In Stock: 77
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.3132
Total :$ 0.31
Delivery :
Payment :
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BSH111,235 information
Nexperia USA Inc. BSH111,235 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-65°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-236AB
- Power Dissipation ( Max):830mW (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):55 V
- Current - Continuous Drain ( Id) @ 25° C:335mA (Ta)
- Rds On ( Max) @ Id, Vgs:4Ohm @ 500mA, 4.5V
- Vgs(th) ( Max) @ Id:1.3V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:1 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:40 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±10V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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