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Nexperia USA Inc. BSH103,215
MOSFET N-CH 30V 850MA TO236AB
Manufacturer # :BSH103,215
Manufacturer :Nexperia USA Inc.
Dasenic # :BSH103,215-DS
Datasheet :
BSH103,215 Datasheet
BSH103,215 DatasheetCustomer # :
Description : MOSFET N-CH 30V 850MA TO236AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.0650 | $ 0.07 |
| 25+ | $ 0.0637 | $ 1.59 |
| 100+ | $ 0.0611 | $ 6.11 |
| 500+ | $ 0.0585 | $ 29.25 |
| 1000+ | $ 0.0553 | $ 55.3 |
In Stock: 16280
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.065
Total :$ 0.07
Delivery :
Payment :
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BSH103,215 information
Nexperia USA Inc. BSH103,215 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Not For New Designs
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-236AB
- Power Dissipation ( Max):540mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:850mA (Ta)
- Rds On ( Max) @ Id, Vgs:400mOhm @ 500mA, 4.5V
- Vgs(th) ( Max) @ Id:400mV @ 1mA (Min)
- Gate Charge ( Qg) ( Max) @ Vgs:2.1 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:83 pF @ 24 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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