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Nexperia USA Inc. BAS316/DG/B3,135
DIODE GEN PURP 100V 250MA TO236
Manufacturer # :BAS316/DG/B3,135
Manufacturer :Nexperia USA Inc.
Dasenic # :BAS316/DG/B3,135-DS
Datasheet :
BAS316/DG/B3,135 Datasheet
BAS316/DG/B3,135 DatasheetCustomer # :
Description : DIODE GEN PURP 100V 250MA TO236
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| Quantity | Unit Price | Total |
In Stock: 88
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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BAS316/DG/B3,135 information
Nexperia USA Inc. BAS316/DG/B3,135 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Obsolete
- Mounting Type:Surface Mount
- Package / Case:SC-76, SOD-323
- Supplier Device Package:SOD-323
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):250mA (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.25 V @ 150 mA
- Current - Reverse Leakage @ Vr:500 nA @ 80 V
- Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):100 V
- Reverse Recovery Time (trr):4 ns
- Operating Temperature - Junction:150°C (Max)
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.10.0070
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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