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GeneSiC Semiconductor 1N3892R
Manufacturer # :1N3892R
Manufacturer :GeneSiC Semiconductor
Dasenic # :1N3892R-DS
Datasheet : 1N3892R Datasheet
Customer # :
Description : DIODE GEN PURP REV 400V 12A DO4
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In Stock: 1692
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 8.424
Total :$ 8.42
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1N3892R information
GeneSiC Semiconductor 1N3892R technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Chassis, Stud Mount
- Package / Case:DO-203AA, DO-4, Stud
- Supplier Device Package:DO-4
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Standard, Reverse Polarity
- Current - Average Rectified ( Io):12A
- Voltage - Forward ( Vf) ( Max) @ If:1.4 V @ 12 A
- Current - Reverse Leakage @ Vr:25 µA @ 50 V
- Capacitance @ Vr, F:-
- Voltage - D C Reverse ( Vr) ( Max):400 V
- Reverse Recovery Time (trr):200 ns
- Operating Temperature - Junction:-65°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
1N3892R provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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