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Macronix MX25L25773GZ4I-08G
Manufacturer # :MX25L25773GZ4I-08G
Manufacturer :Macronix
Dasenic # :MX25L25773GZ4I-08G-DS
Datasheet : MX25L25773GZ4I-08G Datasheet
Customer # :
Description : MEMORY
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 1945
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.745
Total :$ 2.75
Delivery :
Payment :
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MX25L25773GZ4I-08G information
Macronix MX25L25773GZ4I-08G technical specifications, attributes, parameters.
- Category:Integrated Circuits (ICs)/Memory Integrated Circuit
- Product Status:Active
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:8-WDFN Exposed Pad
- Technology:FLASH - NOR (SLC)
- Supplier Device Package:8-WSON (8x6)
- Memory Size:256Mbit
- Memory Type:Non-Volatile
- Voltage - Supply:2.7V ~ 3.6V
- Clock Frequency:120 MHz
- Access Time:4.5 ns
- Memory Format:Flash
- Memory Interface:SPI - Quad I/O, QPI, DTR
- Write Cycle Time - Word, Page:30µs, 750µs
- Series:MXSMIO™
- Memory Organization:64M x 2, 128M x 2, 256M x 1
- Packaging:Tray
- MSL Rating:3 (168 Hours,30°C/60%RH)
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
MX25L25773GZ4I-08G provided by Macronix
Macronix was established in 1989 in the Science Park, Hsinchu, Taiwan.
Macronix, a leading integrated device manufacturer in the Non-Volatile Memory (NVM) market, provides a full range of NOR Flash, NAND Flash, and ROM products. With its world-class R&D and manufacturing capability, Macronix continues to deliver high-quality, innovative and performance driven products to its customers in the consumer, communication, computing, industrial, automotive, networking and other segment markets.
Macronix owns one 12-inch wafer fab (Fab 5) and one 8-inch wafer fab (Fab 2). Macronix designs and fabricates its nonvolatile memory products in Fab 5 & Fab 2.
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