Kaga FEI America, Inc. MB85RS4MTPF-G-BCERE1

The MB85RS4MTPF-G-BCERE1 is a 4Mb FRAM memory chip that combines the speed of SRAM with the non-volatility of flash. It offers high-speed data access and endurance over conventional non-volatile memory options. FRAM is known for its low power consumption and high write endurance, making it suitable for a variety of applications where data integrity and reliability are critical. Functions - Non-volatility: Retains data even when power is removed. - High endurance: Can withstand a large number of write cycles (typically up to 10^14). - Fast write and read cycles: The memory can be accessed and written at speeds similar to SRAM. - Low Power Consumption: Operates at low voltage levels, consuming less power than EEPROM or flash memory. Applications - Industrial Automation: Data logging and configuration storage. - Smart Meters: Storing parameters and logs without loss of data during power outages. - Automotive Systems: Used in application settings where reliability and speed are essential. - Consumer Electronics: In devices that require frequent data updates. - IoT Devices: Suitable for applications needing both non-volatile memory and low power usage. Alternative Parts - Kioxia (Toshiba) TC58NVG2S3H: A NAND flash alternative. - Microchip Technology 25AA040A: An EEPROM alternative with a slightly different memory technology. - Winbond W25Q80: Another SPI Flash memory as an alternative to FRAM. - Cypress Semiconductor CY15B104Q: A different type of non-volatile RAM option. Embedded Modules - Evaluation Kits: Often, manufacturers provide evaluation boards designed to test FRAM performance, which can be useful to developers. - Interface Modules: Depending on the application, you might find modules providing SPI or I2C interfaces to simplify the connection to microcontrollers. Q&A Q1: What is the primary advantage of FRAM over traditional EEPROM? A1: The primary advantage of FRAM is its high endurance and speed. FRAM can handle significantly more write cycles than EEPROM and can perform write operations in a much shorter time, making it more suitable for applications requiring frequent data updates. Q2: Can the MB85RS4MTPF-G-BCERE1 operate at low power conditions? A2: Yes, FRAM consumes lower power compared to traditional non-volatile memories like flash and EEPROM, particularly during write operations, making it ideal for battery-operated devices and energy efficiency applications. Q3: In what applications would you definitely choose FRAM like the MB85RS4MTPF-G-BCERE1 over flash memory? A3: FRAM is chosen over flash memory in applications requiring high write endurance, quick access times, low power consumption, and non-volatility, such as in medical devices, industrial controllers, and real-time data logging systems. Q4: What is the storage capacity of MB85RS4MTPF-G-BCERE1, and how does it compare to other memory types? A4: The storage capacity of the MB85RS4MTPF-G-BCERE1 is 4Mb (512KB). While this is smaller compared to many flash memories which can offer gigabytes of storage, FRAM’s benefits lie in speed and endurance rather than pure storage capacity. Q5: Can you use the MB85RS4MTPF-G-BCERE1 in a microcontroller-based project? A5: Absolutely. The MB85RS4MTPF-G-BCERE1 can be interfaced with microcontrollers through standard communication protocols like SPI, making it a great choice for embedded projects that require reliable, fast, and non-volatile memory.