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IXYS Corporation MUBW35-12A7
IGBT MODULE 1200V 50A 225W E2
Manufacturer # :MUBW35-12A7
Manufacturer :IXYS Corporation
Dasenic # :DA88D2-DS
Datasheet :
MUBW35-12A7 Datasheet
MUBW35-12A7 DatasheetSample :
Customer # :
Description : IGBT MODULE 1200V 50A 225W E2 E2
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 6+ | $ 197.616700 | $ 1185.7 |
| 12+ | $ 180.403300 | $ 2164.84 |
| 102+ | $ 163.192200 | $ 16645.6 |
In Stock: 1899
MOQ :1 PCS
Packaging :E2
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 197.6167
Total :$ 197.62
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/IGBT Modules
- Product Status:Active
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:E2
- Power - Max:225 W
- Supplier Device Package:E2
- Configuration:Three Phase Inverter with Brake
- Input:Three Phase Bridge Rectifier
- Current - Collector ( Ic) ( Max):50 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- Current - Collector Cutoff ( Max):1.1 mA
- I G B T Type:NPT
- Vce(on) ( Max) @ Vge, Ic:3.1V @ 15V, 35A
- Input Capacitance ( Cies) @ Vce:1.65 nF @ 25 V
- N T C Thermistor:Yes
