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IXYS FII24N17AH1
IGBT H BRIDGE 1700V 18A I4PAK5
Manufacturer # :FII24N17AH1
Manufacturer :IXYS
Dasenic # :FII24N17AH1-DS
Datasheet :
FII24N17AH1 Datasheet
FII24N17AH1 DatasheetCustomer # :
Description : IGBT H BRIDGE 1700V 18A I4PAK5
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 25+ | $ 59.1600 | $ 1479 |
| 100+ | $ 58.0800 | $ 5808 |
| 250+ | $ 56.0000 | $ 14000 |
In Stock: 2364
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 59.16
Total :$ 59.16
Delivery :
Payment :
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FII24N17AH1 information
IXYS FII24N17AH1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - IGBTs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:i4-Pac™-5
- Power - Max:140 W
- Supplier Device Package:ISOPLUS i4-PAC™
- Configuration:Half Bridge
- Input:Standard
- Current - Collector ( Ic) ( Max):18 A
- Voltage - Collector Emitter Breakdown ( Max):1700 V
- Current - Collector Cutoff ( Max):100 µA
- I G B T Type:NPT
- Vce(on) ( Max) @ Vge, Ic:6V @ 15V, 16A
- Input Capacitance ( Cies) @ Vce:2.4 nF @ 25 V
- N T C Thermistor:No
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- California Proposition 65:WARNING: This product may contain chemicals prohibited by Proposition 65.
- China RoHS Status:Green Symbol: Green and environmentally friendly product
FII24N17AH1 provided by IXYS
Since its founding in Silicon Valley in 1983, IXYS Corporation(NASDAQ:IXYS) has been a worldwide pioneer in the development of power semiconductors, solid state relays, high voltage integrated circuits, and microcontrollers.With an end customer base of over 3,500 across the industrial, automotive,communications, consumer, medical and transportation industries, IXYS is a worldwide recognized provider of advanced semiconductors.
IXYS focuses on various semiconductor technologies, including power MOSFETs, IGBTs (Insulated Gate Bipolar Transistors), rectifiers, thyristors, diodes, and other discrete and integrated semiconductor solutions.The company also manufactures mixed-signal and analog ICs, RF power amplifiers, and power management ICs.
In January 2018, Littelfuse, Inc. (NASDAQ:LFUS) finished acquiring IXYS Corporation and IXYS was delisted from NASDAQ.
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