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ISSI® IS45S32200E-7TLA2
Manufacturer # :IS45S32200E-7TLA2
Manufacturer :ISSI®
Dasenic # :IS45S32200E-7TLA2-DS
Datasheet : IS45S32200E-7TLA2 Datasheet
Customer # :
Description : IC DRAM 64MBIT PAR 86TSOP II
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In Stock: 50294
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.529
Total :$ 2.53
Delivery :
Payment :
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IS45S32200E-7TLA2 information
ISSI® IS45S32200E-7TLA2 technical specifications, attributes, parameters.
- Category:Integrated Circuits (ICs)/Memory Integrated Circuit
- Product Status:Obsolete
- Package / Case:86-TFSOP (0.400, 10.16mm Width)
- Technology:SDRAM
- Operating Temperature:-40°C ~ 105°C (TA)
- Voltage- Supply:3V ~ 3.6V
- Memory Size:64Mbit
- Memory Type:Volatile
- Clock Frequency:143 MHz
- Access Time:5.5 ns
- Memory Format:DRAM
- Memory Interface:Parallel
- Memory Organization:2M x 32
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
IS45S32200E-7TLA2 provided by ISSI®
Founded in 1988,Integrated Silicon Solution, Inc. (ISSI) is a semiconductor company that specializes in the design, development, and manufacturing of a wide range of integrated circuits (ICs) and memory products.
We designs, develops, and markets high performance integrated circuits for the following key markets:automotive,industrial and medical, communications/enterprise, and digital consumer.
Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products.
ISSI also offers customization and application-specific solutions to meet the unique requirements of our customers.
ISSI's regional headquarters is in California, with worldwide offices in Mainland China, Europe, Hong Kong, India, Israel, Japan, Korea, Singapore, and Taiwan and the U.S.
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We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.