ISSI, Integrated Silicon Solution Inc IS43DR16640B-25DBLI

ISSI, Integrated Silicon Solution Inc IS43DR16640B-25DBLI Environmental and export classification status description

The ISSI® IS43DR16640B-25DBLI is a high-performance dynamic random-access memory (DRAM) device designed for use in a variety of applications. It belongs to the DDR (Double Data Rate) SDRAM family, providing enhanced performance for high-speed memory storage needs. It features a 16-bit wide data bus and offers a density of 64 Megabits (8 Megabytes). This particular part operates at a clock speed of up to 200 MHz and is built to support a wide range of operating conditions, making it suitable for various consumer, industrial, and automotive applications. Functions 1. Data Storage: Provides temporary storage for data in computing and electronic applications. 2. High-Speed Access: Supports fast data access and transfer rates. 3. Power Management: Designed for low power consumption in mobile and portable devices. 4. Error Correction: Supports ECC (Error Correction Code) features for improved data integrity. 5. Multibank Architecture: Allows for simultaneous access to multiple memory banks to optimize performance. Applications - Mobile devices like smartphones and tablets - Automotive electronics - Industrial equipment - Consumer electronics (e.g., digital cameras, gaming consoles) - Networking equipment (e.g., routers and switches) Alternative Parts 1. Micron MT45W4M16P: Another low-power DRAM with similar specifications and applications. 2. NXP LPC5500 series: Microcontrollers with embedded SRAM suitable for some memory functions. 3. Samsung K4B4G1646F: A DRAM alternative with a similar density and speed range. 4. SK Hynix H5TQ2G83BFR: A compatible DRAM solution for low-voltage applications. Embedded Modules - DDR2/DDR3 SDRAM: Modules that include integrated circuits for higher performance. - Embedded DRAM (eDRAM): Combines DRAM memory closely with logic circuitry for certain applications like graphics processing. - SoC with Integrated Memory: Technologies like System on Chip that integrate memory with processing cores. Related Q&A Q1: What are the main benefits of using ISSI IS43DR16640B-25DBLI over other memory options? A1: The ISSI IS43DR16640B-25DBLI offers high-speed performance with a 200 MHz operation frequency, low power consumption, and enhanced data integrity through error correction features, making it ideal for applications requiring fast and reliable memory access. Q2: In which applications can the implemented memory technologies of the IS43DR16640B be best utilized? A2: This memory IC is suitable for mobile devices, automotive applications, consumer electronics, and networking equipment, benefiting from its high performance and low power characteristics. Q3: Are there any specific power supply requirements for the ISSI IS43DR16640B-25DBLI? A3: Yes, the IS43DR16640B-25DBLI typically operates at a power supply of 2.5V for core operations and is designed to minimize power consumption to suit battery-operated devices. Q4: How does the error correction feature work in the ISSI IS43DR16640B-25DBLI? A4: The error correction code (ECC) feature in the IS43DR16640B-25DBLI detects and corrects single-bit memory errors, thereby enhancing the reliability of data stored in memory, which is crucial for applications demanding high data integrity. Q5: What alternatives exist if the ISSI IS43DR16640B-25DBLI is unavailable for a project? A5: Alternatives like Micron MT45W4M16P, Samsung K4B4G1646F, and SK Hynix H5TQ2G83BFR are suitable substitutes, offering comparable performance characteristics and densities, ensuring design flexibility.