ISSI, Integrated Silicon Solution Inc IS42S16160G-6BI

ISSI, Integrated Silicon Solution Inc IS42S16160G-6BI Environmental and export classification status description

The ISSI® IS42S16160G-6BI is a 256Mb synchronous dynamic random-access memory (SDRAM) integrated circuit. It operates at a speed grade of 6 and is part of the IS42S16160G family of SDRAM ICs. Functions: - Stores data dynamically in a volatile memory array. - Synchronizes data transfers with an external clock signal. - Provides high-speed data storage and retrieval capabilities. Applications: - Embedded systems. - Networking equipment. - Telecommunications devices. - Consumer electronics. - Industrial automation. Alternative Components: - Micron Technology Inc. MT48LC16M16A2P-75: A 256Mb SDRAM IC. - Samsung Electronics K4B1G0446E: Another 256Mb SDRAM IC option. Embedded Modules: - Clock generator. - Data input/output buffers. - Row and column address decoders. Related Q&A: 1. Q: What is the operating voltage range of the IS42S16160G-6BI? A: The operating voltage range is typically 2.5V to 2.75V. 2. Q: Can this SDRAM IC be used in automotive applications? A: While not specifically designed for automotive use, it can be used in suitable automotive applications where the operating conditions meet the specified requirements. 3. Q: How does the CAS latency impact the performance of the IS42S16160G-6BI? A: Lower CAS latency values indicate faster data access times, resulting in improved performance. 4. Q: Is the IS42S16160G-6BI backward compatible with older SDRAM standards? A: It is not backward compatible with all older SDRAM standards, so compatibility should be verified based on the specific system requirements. 5. Q: Can this SDRAM IC be overclocked for increased performance? A: Overclocking may be possible, but it could lead to instability and data loss. Care should be taken when attempting to overclock the IS42S16160G-6BI.