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Infineon Technologies SPW47N60C3FKSA1

MOSFET N-CH 650V 47A TO247-3
part number has RoHS
Manufacturer # :SPW47N60C3FKSA1
Manufacturer :Infineon Technologies
Dasenic # :DC0F64-DS
Customer # :
Description : MOSFET N-CH 650V 47A TO247-3 TO-247-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
11+$ 4.144500$ 45.59
27+$ 3.400200$ 91.81
41+$ 3.294000$ 135.05
57+$ 3.187800$ 181.7
74+$ 3.081600$ 228.04
In Stock: 45021
MOQ :1 PCS
Packaging :TO-247-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.1445
Total :$ 4.14
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SPW47N60C3FKSA1 information

Product Details
The Infineon SPW47N60C3FKSA1 is a high-voltage power MOSFET designed to provide efficient switching capabilities in various applications. It has a maximum voltage rating of 600V and a continuous current rating that allows for significant power handling capability. This component is built on Infineon's Trench technology, which enhances performance in terms of switching losses and conduction losses. Functions - Switching: The primary function of the SPW47N60C3FKSA1 is to switch electrical power in various electronic circuits efficiently. - Amplification: It can amplify signals in certain configurations allowing for control of larger loads. - Rectification: In some applications, it may serve in rectification processes, converting AC to DC. Applications The SPW47N60C3FKSA1 is commonly used in: - SMPS (Switched-Mode Power Supplies): For efficient power conversion in various electronic devices. - Motor Drivers: To control motors in industrial and consumer applications. - Lighting Applications: Such as LED drivers, where it regulates the power supplied to LEDs. - Power Inverters: In renewable energy applications, such as solar power systems. - Home Appliances: To switch and manage loads in washing machines, refrigerators, etc. Alternative Parts If the SPW47N60C3FKSA1 is unavailable or not suitable for a specific application, alternative parts to consider may include: - IRF840: A 500V MOSFET with similar applications but a lower voltage rating. - STP47N60: A 600V MOSFET from STMicroelectronics, suitable for similar high-voltage applications. - FQP47N60: Another 600V MOSFET option from ON Semiconductor. - BSS123: A lower voltage MOSFET for applications where 600V is not needed. Embedded Modules The SPW47N60C3FKSA1 can be integrated into various embedded systems and modules. Look for power management evaluation boards or driver modules that utilize this MOSFET. Some embedded applications might feature: - Power control modules: These include microcontroller-based systems that require efficient MOSFET switching. - Driver ICs: Integrated circuits that include MOSFET drivers specifically designed for high-voltage applications. Related Q&A Q1: What is the maximum voltage and current rating for the SPW47N60C3FKSA1? A1: The SPW47N60C3FKSA1 has a maximum voltage rating of 600V and a continuous current rating of approximately 47A. Q2: What type of technology does the SPW47N60C3FKSA1 use, and how does it benefit performance? A2: The SPW47N60C3FKSA1 uses Infineon’s Trench technology, which reduces switching losses and conduction losses, enabling higher efficiency in power applications. Q3: In which applications would one typically use the SPW47N60C3FKSA1? A3: It is commonly used in switched-mode power supplies (SMPS), motor drivers, lighting applications, power inverters, and various home appliances. Q4: Are there any alternative MOSFETs to the SPW47N60C3FKSA1? A4: Yes, alternatives include IRF840, STP47N60, FQP47N60, and BSS123, depending on specific voltage and current requirements. Q5: Can the SPW47N60C3FKSA1 be used in embedded systems? A5: Yes, it can be used in embedded systems within power control modules and driver ICs that require high efficiency and high voltage handling.
  • Infineon Technologies SPW47N60C3FKSA1 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Single MOSFETs
  • Product Status:Active
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:PG-TO247-3-1
  • Power Dissipation ( Max):415W (Tc)
  • F E T Type:N-Channel
  • Drain to Source Voltage ( Vdss):650 V
  • Current - Continuous Drain ( Id) @ 25° C:47A (Tc)
  • Rds On ( Max) @ Id, Vgs:70mOhm @ 30A, 10V
  • Vgs(th) ( Max) @ Id:3.9V @ 2.7mA
  • Gate Charge ( Qg) ( Max) @ Vgs:320 nC @ 10 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:6800 pF @ 25 V
  • Drive Voltage ( Max Rds On, Min Rds On):10V
  • Vgs ( Max):±20V
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