Infineon Technologies SMBTA06UPNE6327HTSA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays
Product Status:Not For New Designs
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Power - Max:330mW
Supplier Device Package:PG-SC74-6
Transistor Type:NPN, PNP
Current - Collector ( Ic) ( Max):500mA
Voltage - Collector Emitter Breakdown ( Max):80V
Vce Saturation ( Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff ( Max):100nA
D C Current Gain (h F E) ( Min) @ Ic, Vce:100 @ 100mA, 1V
Frequency - Transition:100MHz
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
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SMBTA06UPNE6327HTSA1 Datasheet
