Infineon Technologies IRG5K150HF12B technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - IGBTs - Modules
Product Status:Obsolete
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:POWIR® 62 Module
Power - Max:1060 W
Supplier Device Package:POWIR® 62
Configuration:Half Bridge
Input:Standard
Current - Collector ( Ic) ( Max):300 A
Voltage - Collector Emitter Breakdown ( Max):1200 V
Current - Collector Cutoff ( Max):2 mA
I G B T Type:-
Vce(on) ( Max) @ Vge, Ic:2.6V @ 15V, 150A
Input Capacitance ( Cies) @ Vce:19 nF @ 25 V
N T C Thermistor:No
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
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IRG5K150HF12B Datasheet
