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International Rectifier(IR) IRFP3206PBF

MOSFET N-CH 60V 120A TO247AC
part number has RoHS
Manufacturer # :IRFP3206PBF
Dasenic # :172ACB-DS
Customer # :
Description : MOSFET N-CH 60V 120A TO247AC TO-247AC-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
35+$ 1.304100$ 45.64
85+$ 1.070100$ 90.96
135+$ 1.036800$ 139.97
180+$ 1.003500$ 180.63
235+$ 0.970200$ 228
In Stock: 24000
MOQ :1 PCS
Packaging :TO-247AC-3
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.3041
Total :$ 1.30
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IRFP3206PBF information

Product Details
The IRFP3206PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. It features low on-resistance and high-speed capabilities, which make it suitable for various applications in power electronics. Functions - Switching Device: The IRFP3206PBF functions as a switch for controlling power to loads in various circuits. - Amplification: It can amplify signals in some specific configurations. - Rectification: It can be used in synchronous rectifier applications. Applications - Power Supply Converters: Used in DC-DC converters and switch-mode power supplies (SMPS). - Motor Drivers: Suitable for driving motors in various electrical applications. - Battery Management Systems: Used in circuits for managing and protecting battery systems. - Inverters: Utilized in solar inverters and other inverter applications for converting DC to AC. - Lighting Control: Employed in LED drivers and lighting control systems. Alternative Parts - IRF3206: A similar MOSFET option with different specifications. - MOSFETs from ON Semiconductor: Such as the NTPF3206N or FDB835N15. - STMicroelectronics MOSFETs: Like the STP32NF06L, which also performs well in similar applications. Embedded Modules While the IRFP3206PBF itself is a discrete component, it can be found in various embedded modules in: - Motor control boards - Power management ICs - Energy conversion modules Related Q&A 1. Q: What are the key specifications of the IRFP3206PBF? A: The key specifications include a maximum V_DS (drain-source voltage) of 55V, an R_DS(on) (on-resistance) of about 4.5 mΩ at V_GS (gate-source voltage) of 10V, and a maximum continuous drain current of 120A. 2. Q: In what types of applications is the IRFP3206PBF commonly used? A: It is commonly used in power supply converters, motor drivers, battery management systems, and inverters, as well as in high-efficiency LED drivers. 3. Q: What are the thermal characteristics of the IRFP3206PBF? A: The IRFP3206PBF has a thermal resistance junction-to-case of about 0.5°C/W, indicating that it can handle significant power dissipation provided adequate thermal management is implemented. 4. Q: How does the IRFP3206PBF compare against other MOSFETs in the market? A: Compared to other similar MOSFETs, the IRFP3206PBF typically offers lower on-resistance and a higher current rating, making it suitable for more demanding applications; however, users should cross-reference datasheets for specific use cases. 5. Q: Is the IRFP3206PBF suitable for high-frequency applications? A: Yes, the IRFP3206PBF is designed for high-speed switching applications, making it suitable for high-frequency operations such as in switch-mode power supplies. However, circuit design should consider gate drive considerations for optimal performance.
  • International Rectifier(IR) IRFP3206PBF technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Single MOSFETs
  • Product Status:Active
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:TO-247AC
  • Power Dissipation ( Max):280W (Tc)
  • F E T Type:N-Channel
  • Drain to Source Voltage ( Vdss):60 V
  • Current - Continuous Drain ( Id) @ 25° C:120A (Tc)
  • Rds On ( Max) @ Id, Vgs:3mOhm @ 75A, 10V
  • Vgs(th) ( Max) @ Id:4V @ 150µA
  • Gate Charge ( Qg) ( Max) @ Vgs:170 nC @ 10 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:6540 pF @ 50 V
  • Drive Voltage ( Max Rds On, Min Rds On):10V
  • Vgs ( Max):±20V
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