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International Rectifier(IR) IRFHM8363TRPBF
MOSFET 2N-CH 30V 11A 8PQFN![part number has RoHS](/img/RoHS2.png)
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Quantity | Unit Price | Total |
1+ | $ 0.432000 | $ 0.43 |
10+ | $ 0.392400 | $ 3.92 |
100+ | $ 0.385200 | $ 38.52 |
500+ | $ 0.383400 | $ 191.7 |
4000+ | $ 0.382500 | $ 1530 |
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IRFHM8363TRPBF information
International Rectifier(IR) IRFHM8363TRPBF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Not For New Designs
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Technology:MOSFET (Metal Oxide)
- Power - Max:2.7W
- Supplier Device Package:8-PQFN (3.3x3.3), Power33
- Configuration:2 N-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):30V
- Current - Continuous Drain ( Id) @ 25° C:11A
- Rds On ( Max) @ Id, Vgs:14.9mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:2.35V @ 25µA
- Gate Charge ( Qg) ( Max) @ Vgs:15nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:1165pF @ 10V
- Series:HEXFET®
- Base Product Number:IRFHM8363
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
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