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Infineon Technologies IRF9953TR
MOSFET 2P-CH 30V 2.3A 8-SOIC![part number has RoHS](/img/RoHS2.png)
Manufacturer # :IRF9953TR
Manufacturer :Infineon Technologies
Dasenic # :AEF227-DS
Datasheet :
IRF9953TR Datasheet
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Description : MOSFET 2P-CH 30V 2.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR)
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4000+ | $ 1.279400 | $ 5117.6 |
8000+ | $ 1.218500 | $ 9748 |
12000+ | $ 1.162200 | $ 13946.4 |
In Stock: 2284
MOQ :1 PCS
Packaging :8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 2.3029
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- Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Power - Max:2W
- Supplier Device Package:8-SO
- Configuration:2 P-Channel (Dual)
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):30V
- Current - Continuous Drain ( Id) @ 25° C:2.3A
- Rds On ( Max) @ Id, Vgs:250mOhm @ 1A, 10V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12nC @ 10V
- Input Capacitance ( Ciss) ( Max) @ Vds:190pF @ 15V
- Series:HEXFET®
- Base Product Number:IRF995
- Packaging:Tape & Reel (TR)